/iiij MTP2N90 tmos power fets 2 amperes 'dsionl = 8 ohms 850 ?nd 900 volts maximum ratings rating drain-source voltage drain-gate voltage (rqs = 1 mfl> gate-source voltage ? continuous ? non-repetitive (tp =s so /is) drain current ? continuous ? pulsed total power dissipation @ trj ? 25c derate above 25c operating and storage temperature range symbol vdss vdgr vgs vgsm id 'dm pd tj. ts,g mtm2n85 mtp2n8s 850 850 mtm2n90 MTP2N90 900 900 20 40 2 7 75 0.6 -65 to 150 unit vdc vdc vdc vpk adc watts wrc c thermal characteristics thermal resistance junction to case junction to ambient to-204 to-220 maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds "?jc "?ja tl 1.67 30 62.5 275 ?c/w ?c mtm2n8s mtm2n90 to-204aa to-220ab nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
20 stern ave. springfield, new jersey 07081 u.s.a. o ne. telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 off characteristics drain-source breakdown voltage (vqs - 0, id = 0.26 mai mtm/mtp2n8s mtm/MTP2N90 zero gate voltage drain current |
